Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 2
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Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2
Author | : Fred Roozeboom |
Publisher | : The Electrochemical Society |
Total Pages | : 472 |
Release | : 2006 |
Genre | : Gate array circuits |
ISBN | : 1566775027 |
Download Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 Book in PDF, Epub and Kindle
These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.