Compact Hierarchical Bipolar Transistor Modeling with Hicum

Compact Hierarchical Bipolar Transistor Modeling with Hicum
Author: Michael Schr”ter
Publisher: World Scientific
Total Pages: 753
Release: 2010
Genre: Technology & Engineering
ISBN: 981427321X

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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.


Compact Hierarchical Bipolar Transistor Modeling with Hicum
Language: en
Pages: 753
Authors: Michael Schr”ter
Categories: Technology & Engineering
Type: BOOK - Published: 2010 - Publisher: World Scientific

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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circu
Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications
Language: en
Pages: 378
Authors: Niccolò Rinaldi
Categories: Technology & Engineering
Type: BOOK - Published: 2018-03-15 - Publisher: River Publishers

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The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The
Non Quasi-static Effects Investigation for Compact Bipolar Transistor Modeling
Language: en
Pages: 0
Authors: Arkaprava Bhattacharyya
Categories:
Type: BOOK - Published: 2011 - Publisher:

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Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi
Research on the Radiation Effects and Compact Model of SiGe HBT
Language: en
Pages: 187
Authors: Yabin Sun
Categories: Technology & Engineering
Type: BOOK - Published: 2017-10-24 - Publisher: Springer

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This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the
Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications
Language: en
Pages: 377
Authors: Niccolò Rinaldi
Categories: Technology & Engineering
Type: BOOK - Published: 2022-09-01 - Publisher: CRC Press

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The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The