Determination Of Deep Impurities In Silicon And Germanium By Infrared Photoconductivity Classic Reprint

Excerpt from Determination of Deep Impurities in Silicon and Germanium by Infrared Photoconductivity The most direct method for determining the Optical absorption cross section of a particular impurity is measurement of the transmission of a specimen containing a known concentration of the impurity. Emmons [2] gives a discussion of the procedure with specific application to gallium in silicon at 20 K. Data are usually obtained as a function of wave length and at the temperature used for the photoconductivity measurements as the cross sections are generally wavelength and temperature dependent. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.