Ferroelectric Random Access Memories
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Ferroelectric Random Access Memories
| Author | : Hiroshi Ishiwara |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 316 |
| Release | : 2004-04-16 |
| Genre | : Computers |
| ISBN | : 9783540407188 |
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The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
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