Fundamental Aspects of Silicon Oxidation

Fundamental Aspects of Silicon Oxidation
Author: Yves J. Chabal
Publisher: Springer Science & Business Media
Total Pages: 269
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3642567118
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Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.


Fundamental Aspects of Silicon Oxidation
Language: en
Pages: 269

Fundamental Aspects of Silicon Oxidation

Authors: Yves J. Chabal
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

GET EBOOK

Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent T
Fundamental Aspects of Silicon Oxidation
Language: en
Pages: 280

Fundamental Aspects of Silicon Oxidation

Authors: Yves J Chabal
Categories:
Type: BOOK - Published: 2001-04-24 - Publisher:

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Physics and Technology of Silicon Carbide Devices
Language: en
Pages: 414

Physics and Technology of Silicon Carbide Devices

Authors: Yasuto Hijikata
Categories: Science
Type: BOOK - Published: 2012-10-16 - Publisher: IntechOpen

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Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), an
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
Language: en
Pages: 503

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

Authors: Eric Garfunkel
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers
Physics and Technology of Silicon Carbide Devices
Language: en
Pages: 284

Physics and Technology of Silicon Carbide Devices

Authors: George Gibbs
Categories:
Type: BOOK - Published: 2016-10-01 - Publisher:

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Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material l