Gaas Based Metamorphic High Electron Mobility Transistors With High Indium Mole Fraction Quantum Well Channels
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Gaas-based Metamorphic High Electron Mobility Transistors with High Indium Mole Fraction Quantum Well Channels
| Author | : Ming-Yih Kao |
| Publisher | : |
| Total Pages | : 146 |
| Release | : 2004 |
| Genre | : Electrical engineering |
| ISBN | : |
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