Gate Stack Engineering for Emerging Polarization Based Non-volatile Memories

Gate Stack Engineering for Emerging Polarization Based Non-volatile Memories
Author: Milan Pesic
Publisher:
Total Pages:
Release: 2017
Genre:
ISBN: 9783744807081

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Gate Stack Engineering for Emerging Polarization Based Non-volatile Memories
Language: en
Pages:
Authors: Milan Pesic
Categories:
Type: BOOK - Published: 2017 - Publisher:

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Gate Stack Engineering for Emerging Polarization based Non-volatile Memories
Language: en
Pages: 154
Authors: Milan Pesic
Categories: Technology & Engineering
Type: BOOK - Published: 2017-07-14 - Publisher: BoD – Books on Demand

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The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as
Ferroelectricity in Doped Hafnium Oxide
Language: en
Pages: 570
Authors: Uwe Schroeder
Categories: Technology & Engineering
Type: BOOK - Published: 2019-03-27 - Publisher: Woodhead Publishing

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and i
Emerging Ferroelectric Materials and Devices
Language: en
Pages: 186
Authors:
Categories: Science
Type: BOOK - Published: 2023-11-27 - Publisher: Elsevier

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Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an
Non-volatile Ferroelectric Transistor Based Memory Design
Language: en
Pages:
Authors: Sandeep Thirumala
Categories:
Type: BOOK - Published: 2018 - Publisher:

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Ferroelectric Field Effect Transistors (FEFETs) are emerging devices which have immense potential to replace conventional transistors due to their unique charac