Growth And Characterization Of Epitaxial Piezoelectric And Semiconductor Films

This report contains details of the research work carried out on a one-year project on the growth and characterization of ZnO and AlN piezoelectric thin films. Material growth systems are reported for ZnO using the zinc vapor reaction with CO2, ZnCl2 with O2, and the latest metal-organic process. The growth of insulating ZnO has been achieved using lithium doping during film growth. Initial results are reported for a new AlN growth process that shows promise of overcoming some previous growth problems. (Author).