Hot Carrier Degradation in Semiconductor Devices

Hot Carrier Degradation in Semiconductor Devices
Author: Tibor Grasser
Publisher: Springer
Total Pages: 518
Release: 2014-10-29
Genre: Technology & Engineering
ISBN: 3319089943

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.


Hot Carrier Degradation in Semiconductor Devices
Language: en
Pages: 518
Authors: Tibor Grasser
Categories: Technology & Engineering
Type: BOOK - Published: 2014-10-29 - Publisher: Springer

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This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability iss
Hot-Carrier Effects in MOS Devices
Language: en
Pages: 329
Authors: Eiji Takeda
Categories: Technology & Engineering
Type: BOOK - Published: 1995-11-28 - Publisher: Elsevier

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The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for o
Hot Carrier Design Considerations for MOS Devices and Circuits
Language: en
Pages: 345
Authors: Cheng Wang
Categories: Science
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

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As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design
Hot-Carrier Reliability of MOS VLSI Circuits
Language: en
Pages: 223
Authors: Yusuf Leblebici
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

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As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming a
Hot-Carrier and Radiation Effects in Metal-Oxide-Semiconductor Devices
Language: en
Pages:
Authors: Wenliang Chen
Categories:
Type: BOOK - Published: 1992 - Publisher:

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