Impact Of Strain On Memory And Lateral Power Mosfets

Maximum breakdown voltage. This work focuses on the application of mechanical stress to improve the performance of Lateral Diffusion MOSFET. The device behavior was analyzed by measuring and extracting piezoresistance coefficients of these devices and by monitoring avalanche breakdown with mechanical stress. It was found that the on-resistance reduced with stress, while breakdown voltage remained a constant thus making strain a viable performance booster in these devices. With the understanding of device behavior with strain, the application of stress via process was simulated with FLOOPS and Sentaurus process. The amount/ type of stress present in device gives insight into strained device structure and performance.