Materials And Devices For Silicon Based Optoelectronics

Presents 57 contributions from the fall 1997 symposium. Some of the most important conclusions to emerge from the papers are: Si-based visible and infrared light provide competing and complementary methods to overcome poor performance of Si as a light emitter; the silicon-on- insulator Si/SiO2/Si systems are ideal for highly confined waveguides and microphotonics components and for the fabrication of quantum wells and resonant tunneling structures; efficient integrated modulators and optically pumped amplifiers hold promise for Si-compatible optoelectronics; SiGe quantum wells, Ge films on buffered Si, and SnGe-alloys-upon-Si could be used for efficient near infrared light detection, once dark current problems are solved; and finally, new monolithic approaches to the engineering of the optical approaches of Si are allowing new applications and market space for low-cost Si-compatible integrated optoelectronics and microphotonics. Annotation copyrighted by Book News, Inc., Portland, OR