Materials Research Society Symposium Proceedings Volume 743 Gan And Related Alloys 2002

Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.