Metal Oxide Semiconductor Devices Based On Epitaxial Germanium Layers Grown Selectively Directly On Silicon Substrates By Ultra High Vacuum Chemical Vapor Deposition
Download Metal Oxide Semiconductor Devices Based On Epitaxial Germanium Layers Grown Selectively Directly On Silicon Substrates By Ultra High Vacuum Chemical Vapor Deposition full books in PDF, epub, and Kindle. Read online free Metal Oxide Semiconductor Devices Based On Epitaxial Germanium Layers Grown Selectively Directly On Silicon Substrates By Ultra High Vacuum Chemical Vapor Deposition ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition
Author | : Joseph Patrick Donnelly |
Publisher | : |
Total Pages | : 252 |
Release | : 2009 |
Genre | : Gate array circuits |
ISBN | : |
Download Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition Book in PDF, Epub and Kindle
This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry. Replacing the silicon channel with an ultra-thin epitaxial germanium layer grown selectively on a silicon (100) bulk wafer is examined in detail. The gate oxide chosen for the germanium devices is a high-k gate oxide, HfO2, and the gate electrode is a metal gate, tantalum-nitride. They demonstrate large improvements in drive current and mobility over identically processed silicon PMOSFETs. In addition to the planar germanium PMOSFETs, a process has been developed for 50nm and smaller germanium P-finFETs and N and P germanium tunnel-FETs. The patterning of sub-30nm wide and 230nm tall three dimensional fins has been done with electron beam lithography and dry plasma etching. The processes to deposit high-k gate oxide and metal gates on the sub-30nm wide fins have been developed. All that remains for the production of these devices is electron beam lithography with a maximum misalignment error of 40nm.
Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition Related Books
Pages: 252
Pages: 1720
Pages: 514
Pages: 1572
Pages: 162