Nanowire Field Effect Transistors: Principles and Applications

Nanowire Field Effect Transistors: Principles and Applications
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
Total Pages: 292
Release: 2013-10-23
Genre: Technology & Engineering
ISBN: 1461481244

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“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.


Nanowire Field Effect Transistors: Principles and Applications
Language: en
Pages: 292
Authors: Dae Mann Kim
Categories: Technology & Engineering
Type: BOOK - Published: 2013-10-23 - Publisher: Springer Science & Business Media

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“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NW
Silicon Nanowire Field-effect Transistors for Sensing Applications
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Fabrication and Testing of Silicon Nanowire Field Effect Transistors for Sensing Applications
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Advanced Field-Effect Transistors
Language: en
Pages: 306
Authors: Dharmendra Singh Yadav
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Type: BOOK - Published: 2023-12-22 - Publisher: CRC Press

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Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devic