Performance enhancement in column IV mobility, bandgap, and strain engineered MOSFETs

Performance enhancement in column IV mobility, bandgap, and strain engineered MOSFETs
Author: David Masara Onsongo
Publisher:
Total Pages: 340
Release: 2003
Genre: Metal oxide semiconductor field-effect transistors
ISBN:

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Performance enhancement in column IV mobility, bandgap, and strain engineered MOSFETs
Language: en
Pages: 340
Authors: David Masara Onsongo
Categories: Metal oxide semiconductor field-effect transistors
Type: BOOK - Published: 2003 - Publisher:

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Strain-Engineered MOSFETs
Language: en
Pages: 320
Authors: C.K. Maiti
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors
Silicon Heterostructure Devices
Language: en
Pages: 472
Authors: John D. Cressler
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

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SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. H
Strain-Induced Effects in Advanced MOSFETs
Language: en
Pages: 260
Authors: Viktor Sverdlov
Categories: Technology & Engineering
Type: BOOK - Published: 2011-01-06 - Publisher: Springer Science & Business Media

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device desi
Effectiveness of Strain Solutions for Next-Generation MOSFETs
Language: en
Pages: 206
Authors: Nuo Xu
Categories:
Type: BOOK - Published: 2012 - Publisher:

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The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effects.