Quantum Devices in SI/SiGe Heterostructures

Quantum Devices in SI/SiGe Heterostructures
Author: Keith A. Slinker
Publisher:
Total Pages: 142
Release: 2006
Genre:
ISBN:

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Quantum Devices in SI/SiGe Heterostructures
Language: en
Pages: 142
Authors: Keith A. Slinker
Categories:
Type: BOOK - Published: 2006 - Publisher:

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Investigation of Lateral Gated Quantum Devices in Si/SiGe Heterostructures
Language: en
Pages: 75
Authors: Andrew Pan Lai
Categories:
Type: BOOK - Published: 2013 - Publisher:

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Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Becaus
Heterostructures and Quantum Devices
Language: en
Pages: 465
Authors: Norman G. Einspruch
Categories: Technology & Engineering
Type: BOOK - Published: 2014-06-28 - Publisher: Elsevier

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Heterostructure and quantum-mechanical devices promise significant improvement in the performance of electronic and optoelectronic integrated circuits (ICs). Th
Silicon Quantum Integrated Circuits
Language: en
Pages: 790
Authors: E. Kasper
Categories: Science
Type: BOOK - Published: 2005-01-19 - Publisher: Springer Science & Business Media

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Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically
Fabrication and Measurement of Devices in Si/SiGe Nanomembranes
Language: en
Pages: 111
Authors:
Categories:
Type: BOOK - Published: 2014 - Publisher:

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Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large