Sic Thin Films On Insulating Substrates For Robust Microelectromechanical System Mems Applications

An increasing demand for robust MEMS devices, such as micro-sensors, that can operate at temperatures well above 300 deg C and often in severe environments has stimulated the search for alternatives to Si. [1] The research in direct formation of SiC thin-films on insulating substrates (SiCOI) has found a very promising technology for producing SiC device structures and providing an excellent alternative material solution for high temperature applications. MEMS applications require that large area of uniform SiC films is formed on insulating substrates or sacrificial layers [2], [3] such as Si3N4, SiO2, polycrystalline Si (poly-Si), glass, quartz and sapphire substrates. The growth of highly uniform SiC films with a highly stable and impermeable thin-film structure as well as a smooth interface of SiC-substrate is the essential step in producing a MEMS device with the required long-term stability. The major portion of this study was devoted to optimize the SiC growth conditions for different device applications.