Simulation And Design Of Germanium Based Mosfets For Channel Lengths Of 100 Nm And Beloww

The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator from ISE Corporation. This thesis will describe the results of DC and small signal AC simulations of the devices transistor characteristics and compare them with those for a silicon device of the same geometry and size. We will also examine the effects of variations in the device structure on the Ge MOSFETs performance, including the transconductance and high frequency response.