Strained-Si Heterostructure Field Effect Devices

Strained-Si Heterostructure Field Effect Devices
Author: C.K Maiti
Publisher: CRC Press
Total Pages: 438
Release: 2007-01-11
Genre: Science
ISBN: 1420012347
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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi


Strained-Si Heterostructure Field Effect Devices
Language: en
Pages: 438

Strained-Si Heterostructure Field Effect Devices

Authors: C.K Maiti
Categories: Science
Type: BOOK - Published: 2007-01-11 - Publisher: CRC Press

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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented
Fundamentals of Nanoscaled Field Effect Transistors
Language: en
Pages: 211

Fundamentals of Nanoscaled Field Effect Transistors

Authors: Amit Chaudhry
Categories: Technology & Engineering
Type: BOOK - Published: 2013-04-23 - Publisher: Springer Science & Business Media

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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors.
Strained Silicon Heterostructures
Language: en
Pages: 520

Strained Silicon Heterostructures

Authors: C. K. Maiti
Categories: Technology & Engineering
Type: BOOK - Published: 2001 - Publisher: IET

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This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems
Silicon Heterostructure Devices
Language: en
Pages: 472

Silicon Heterostructure Devices

Authors: John D. Cressler
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

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SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. H
Strain-Engineered MOSFETs
Language: en
Pages: 320

Strain-Engineered MOSFETs

Authors: C.K. Maiti
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors