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The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology: cleaning, contamination control, Si-surface chemistry and topography, and its relationship to device performance and process yield. New areas of concern include: cleaning at the interconnect level, resist strip and polymer removal (dry and wet), cleaning and contamination aspects of metallization, wafer backside cleaning and cleaning after Chemical-Mechanical-Polishing (CMP).
Ultra Clean Processing of Silicon Surfaces IV Related Books
The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology:
The proceedings of the Fourth International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS '98) cover all aspects of ultra-clean Si-technology:
The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, c
Volume is indexed by Thomson Reuters CPCI-S (WoS). The proceedings of the Fifth International Symposium on Ultra Clean Processing of Silicon Surfaces cover all
Volume is indexed by Thomson Reuters CPCI-S (WoS). This book is sub-divided into 10 different topical sections; each dealing with important issues in surface cl
