Applications of Silicon-Germanium Heterostructure Devices

Applications of Silicon-Germanium Heterostructure Devices
Author: C.K Maiti
Publisher: CRC Press
Total Pages: 402
Release: 2001-07-20
Genre: Science
ISBN: 1420034693
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The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st


Applications of Silicon-Germanium Heterostructure Devices
Language: en
Pages: 402

Applications of Silicon-Germanium Heterostructure Devices

Authors: C.K Maiti
Categories: Science
Type: BOOK - Published: 2001-07-20 - Publisher: CRC Press

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The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices comb
Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits
Language: en
Pages: 457

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Authors: G.A. Armstrong
Categories: Technology & Engineering
Type: BOOK - Published: 2007-11-30 - Publisher: IET

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The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device
Silicon Heterostructure Devices
Language: en
Pages: 472

Silicon Heterostructure Devices

Authors: John D. Cressler
Categories: Technology & Engineering
Type: BOOK - Published: 2018-10-03 - Publisher: CRC Press

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SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. H
Strained-Si Heterostructure Field Effect Devices
Language: en
Pages: 438

Strained-Si Heterostructure Field Effect Devices

Authors: C.K Maiti
Categories: Science
Type: BOOK - Published: 2007-01-11 - Publisher: CRC Press

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A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented
SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
Language: en
Pages: 373

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Authors: John D. Cressler
Categories: Technology & Engineering
Type: BOOK - Published: 2017-12-19 - Publisher: CRC Press

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What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, t