Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications
Author: Peter John Bjeletich
Publisher:
Total Pages: 480
Release: 2004
Genre:
ISBN:
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Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications
Language: en
Pages: 480

Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications

Authors: Peter John Bjeletich
Categories:
Type: BOOK - Published: 2004 - Publisher:

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Dissertation Abstracts International
Language: en
Pages: 794

Dissertation Abstracts International

Authors:
Categories: Dissertations, Academic
Type: BOOK - Published: 2005 - Publisher:

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Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits
Language: en
Pages:

Low Resistivity Contact Methodologies for Silicon, Silicon Germanium and Silicon Carbon Source/Drain Junctions of Nanoscale CMOS Integrated Circuits

Authors:
Categories:
Type: BOOK - Published: 2004 - Publisher:

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State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressiv
Metal Impurities in Silicon- and Germanium-Based Technologies
Language: en
Pages: 464

Metal Impurities in Silicon- and Germanium-Based Technologies

Authors: Cor Claeys
Categories: Technology & Engineering
Type: BOOK - Published: 2018-08-13 - Publisher: Springer

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This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals incl
Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition
Language: en
Pages: 252

Metal-oxide-semiconductor Devices Based on Epitaxial Germanium Layers Grown Selectively Directly on Silicon Substrates by Ultra-high-vacuum Chemical Vapor Deposition

Authors: Joseph Patrick Donnelly
Categories: Gate array circuits
Type: BOOK - Published: 2009 - Publisher:

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This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay