Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers

Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers
Author: Jeff J. Peterson
Publisher:
Total Pages: 634
Release: 2002
Genre:
ISBN:

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Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers
Language: en
Pages: 634
Authors: Jeff J. Peterson
Categories:
Type: BOOK - Published: 2002 - Publisher:

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Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications
Language: en
Pages: 480
Epitaxial Electronic Materials
Language: en
Pages: 344
Authors: A. Baldereschi
Categories: Compound semiconductors
Type: BOOK - Published: 1988 - Publisher:

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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
Language: en
Pages: 373
Authors: John D. Cressler
Categories: Technology & Engineering
Type: BOOK - Published: 2017-12-19 - Publisher: CRC Press

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What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, t
Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond
Language: en
Pages: 115
Authors: Guilei Wang
Categories: Technology & Engineering
Type: BOOK - Published: 2019-09-20 - Publisher: Springer Nature

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This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As