Formation of Primary Amines on Silicon Nitride Surfaces: a Direct, Plasma-Based Pathway to Functionalization

Formation of Primary Amines on Silicon Nitride Surfaces: a Direct, Plasma-Based Pathway to Functionalization
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Total Pages: 6
Release: 2007
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Silicon nitride is the most commonly used passivation layer in biosensor applications where electronic components must be interfaced with ionic solutions. Unfortunately, the predominant method for functionalizing silicon nitride surfaces, silane chemistry, suffers from a lack of reproducibility. As an alternative, we have developed a silane-free pathway that allows for the direct functionalization of silicon nitride through the creation of primary amines formed by exposure to a radio frequency glow discharge plasma fed with humidified air. The aminated surfaces can then be further functionalized by a variety of methods; here we demonstrate using glutaraldehyde as a bifunctional linker to attach a robust NeutrAvidin (NA) protein layer. Optimal amine formation, based on plasma exposure time, was determined by labeling treated surfaces with an amine-specific fluorinated probe and characterizing the coverage using X-ray photoelectron spectroscopy (XPS). XPS and radiolabeling studies also reveal that plasma-modified surfaces, as compared with silane-modified surfaces, result in similar NA surface coverage, but notably better reproducibility.


Formation of Primary Amines on Silicon Nitride Surfaces: a Direct, Plasma-Based Pathway to Functionalization
Language: en
Pages: 6
Authors:
Categories:
Type: BOOK - Published: 2007 - Publisher:

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Silicon nitride is the most commonly used passivation layer in biosensor applications where electronic components must be interfaced with ionic solutions. Unfor
Formation of Silicon Nitride from the 19th to the 21st Century
Language: en
Pages: 968
Authors: Raymond C. Sangster
Categories: Science
Type: BOOK - Published: 2005 - Publisher: Trans Tech Publications

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This comprehensive reference gathers information published on the chemistry of silicon nitride and its products, uses, and markets. Separate chapters overview t
Formation of Silicon Nitride
Language: en
Pages: 960
Authors: Raymond C. Sangster
Categories: Technology & Engineering
Type: BOOK - Published: 2005-06-01 - Publisher: Trans Tech Publications Ltd

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The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/
Formation of Silicon Nitride from the 19th to the 21st Century
Language: en
Pages: 1016
Authors: Raymond C. Sangster
Categories: Technology & Engineering
Type: BOOK - Published: 2015-05-06 - Publisher: Trans Tech Publications Ltd

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The elements: Si, N, O, C and H, have strong chemical affinities for one another. Under the correct conditions, Si-N bonding will occur in almost any Si-N-(O/C/
MEMS Materials and Processes Handbook
Language: en
Pages: 1211
Authors: Reza Ghodssi
Categories: Technology & Engineering
Type: BOOK - Published: 2011-03-18 - Publisher: Springer Science & Business Media

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MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific proc