High Purity Silicon 9

High Purity Silicon 9
Author: Cor L. Claeys
Publisher: The Electrochemical Society
Total Pages: 504
Release: 2006
Genre: Crystal growth
ISBN: 1566775043

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This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.


High Purity Silicon 9
Language: en
Pages: 504
Authors: Cor L. Claeys
Categories: Crystal growth
Type: BOOK - Published: 2006 - Publisher: The Electrochemical Society

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This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitax
High Purity Silicon 10
Language: en
Pages: 370
Authors: Cor L. Claeys
Categories: Crystal growth
Type: BOOK - Published: 2008-10 - Publisher: The Electrochemical Society

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The issue of the 10th High Purity Silicon symposium provides an overview of the latest developments in the growth, characterization, devices processing, and app
High Purity Silicon VII
Language: en
Pages: 428
Authors: Cor L. Claeys
Categories: Science
Type: BOOK - Published: 2002 - Publisher: The Electrochemical Society

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High Purity Silicon VI
Language: en
Pages: 720
Authors: Electrochemical Society. Meeting
Categories: Science
Type: BOOK - Published: 2000 - Publisher: The Electrochemical Society

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"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, Octo
High Purity Silicon VIII
Language: en
Pages: 454
Authors: Cor L. Claeys
Categories: Technology & Engineering
Type: BOOK - Published: 2004 - Publisher: The Electrochemical Society

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"This Proceedings Volume includes papers that were presented at the Eighth Symposium on High Purity Silicon held in Honolulu, Hawaii at the 206th Meeting of the