Quantum Devices In Si Sige Heterostructures
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Quantum Devices in SI/SiGe Heterostructures
Author | : Keith A. Slinker |
Publisher | : |
Total Pages | : 142 |
Release | : 2006 |
Genre | : |
ISBN | : |
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Language: en
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Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Becaus
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Silicon/silicon-germanium (Si/SiGe) heterostructures are useful as hosts for gated quantum dots. The quality of the as-grown Si/SiGe heterostructure has a large
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Since being proposed almost 40 years ago, scientists across many disciplines have made great progress in the fields of quantum computation and quantum informati