Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Language: en
Pages: 203
Authors: Jacopo Franco
Categories: Technology & Engineering
Type: BOOK - Published: 2013-10-19 - Publisher: Springer Science & Business Media

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Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several g
Interface-engineered Ge MOSFETs for Future High Performance CMOS Applications
Language: en
Pages: 159
Authors: Duygu Kuzum
Categories:
Type: BOOK - Published: 2009 - Publisher: Stanford University

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As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, introduction of performance boosters like novel materials and innovativ
Process Integration and Performance Evaluation of Ge-based Quantum Well Channel MOSFETs for Sub-22nm Node Digital CMOS Logic Technology
Language: en
Pages: 320
Authors: Se-Hoon Lee
Categories:
Type: BOOK - Published: 2011 - Publisher:

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Since metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for integrated circuits in 1961, complementary MOS technology has becom
Ge-based Channel MOSFETs
Language: en
Pages: 160
Authors: Se-hoon Lee
Categories:
Type: BOOK - Published: 2011-10 - Publisher: LAP Lambert Academic Publishing

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This work presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance an
ISTFA 2018: Proceedings from the 44th International Symposium for Testing and Failure Analysis
Language: en
Pages:
Authors:
Categories:
Type: BOOK - Published: 2018-12-01 - Publisher: ASM International

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The International Symposium for Testing and Failure Analysis (ISTFA) 2018 is co-located with the International Test Conference (ITC) 2018, October 28 to Novembe