Statistical Design Of Mos Vlsi Very Large Scale Integrated Circuits With Designed Experiments

A new approach for the statistical design and analysis of Metal Oxide Semiconductor is introduced. The proposed approach approximates the circuit performances, such as gain and delay, by fitted models. The fitted models are then used as surrogates of the circuit simulator to predict and optimize the parametric yield with computation efficiency and to achieve off-line quality control. The use of statistical design and analysis of experiments for model construction have been investigated theoretically and experimentally, and different methods to assess the adequacy of a fitted performance model have been studied. Statistical design; VLSI design; Experimental design; Very large scale integrated circuits; Electronic equipment; Metal oxide semiconductors; Thesis. (jg).